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发表于 2015-8-4 21:00:24
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Title:Toshiba, SanDisk unveil 256Gb 48-layer BiCS NAND flash memory chip
From：http://www.kitguru.net/components/memory/anton-shilov/toshiba-sandisk-unveil-256gb-48-layer-bics-nand-flash-memory-chip/
东芝公司(Toshiba corp .)和SanDisk corp .)已经正式推出了他们的第一个垂直堆叠triple-level-cell(TLC)NAND闪存IC(集成电路)和256 gb的容量。 新的3 d BiCS的钻头成本可伸缩的NAND闪存明年将大规模生产。
东芝的新256 gb(32 gb)48-layer BiCS闪存设备特性3-bit-per-cell TLC(triple-level细胞)架构,可用于各种应用,包括消费者ssd,智能手机,平板电脑,记忆卡,甚至企业ssd数据中心。 今年早些时候,东芝推出128 gb 48-layer BiCS NAND闪存设备具有多层陶瓷2-bit-per-cell架构。
三维NAND闪存特性更高的性能,更长的耐力和每一点成本降低(一旦收益率达到商业上可行的水平),而传统的平面NAND闪存今天使用。 东芝的众多特性/ SanDisk的BiCS 3 d NAND架构,比如u型与非字符串,使最大效率和减少实际芯片大小相比,3 d与非竞争架构。
“从第一天起,东芝的策略是延长我们的浮栅技术,具有世界上最小的15 nm 128 gb死* 3,”斯科特•纳尔逊指出TAEC内存业务部门的高级副总裁。 “我们宣布BiCS FLASH,该行业的第一48-layer 3 d技术,是非常重要的,我们是支持竞争,平滑迁移到3 d闪存——支持存储市场的需求不断增加密度。”
东芝将大规模生产BiCS 3 d闪存在一个全新的制造工厂在四日市操作。 最近建筑的建设完成,预计两家公司将开始在设备在未来几周。
KitGuru说:三星一年左右才介绍薄层色谱3 d V-NAND内存后,开始大规模生产的多层陶瓷3 d V-NAND内存。 东芝正式推出了TLC BiCS 3 d NAND内存只有几个月后宣布其多层陶瓷BiCS 3 d NAND芯片。 虽然东芝似乎而积极开发新的内存芯片时,应该注意的是,该公司将不会启动大规模生产的BiCS 3 d flash早于2016年。
Toshiba Corp. and SanDisk Corp. have formally introduced their first vertically stacked triple-level-cell (TLC) NAND flash memory IC [integrated circuit] with 256Gb capacity. The new 3D BiCS [bit cost scalable] NAND flash memory will be mass produced next year.
Toshiba’s new 256Gb (32GB) 48-layer BiCS flash device features 3-bit-per-cell TLC (triple-level cell) architecture and can be used for a wide range of applications, including consumer SSDs, smartphones, tablets, memory cards, and even enterprise SSDs for data centers. Earlier this year Toshiba introduced 128Gb 48-layer BiCS NAND flash device featuring MLC 2-bit-per-cell architecture.
Three-dimensional NAND flash features higher performance, longer endurance and lower per bit costs (once yields reach commercially viable levels) compared to traditional planar NAND flash memory used today. Numerous peculiarities of Toshiba’s/SanDisk’s BiCS 3D NAND architecture, such as U-shaped NAND string, enable maximum array efficiency and minimize actual chip sizes compared to competing 3D NAND architectures.
“From day one, Toshiba’s strategy has been to extend our floating gate technology, which features the world’s smallest 15nm 128Gb die*3,” noted Scott Nelson, senior vice president of TAEC’s Memory Business Unit. “Our announcement of BiCS FLASH, the industry’s first 48-layer 3D technology, is very significant in that we are enabling a competitive, smooth migration to 3D flash memory – to support the storage market’s demand for ever-increasing densities.”
Toshiba will mass produce BiCS 3D flash memory at an all-new manufacturing facility at Yokkaichi Operations. The construction of the building was completed recently and the two companies are expected to start moving in equipment in the coming weeks.
KitGuru Says: It took Samsung about a year to introduce TLC 3D V-NAND memory after it initiated mass production of MLC 3D V-NAND memory. Toshiba formally introduced its TLC BiCS 3D NAND memory only several months after it announced its MLC BiCS 3D NAND chips. While Toshiba seems to be rather aggressive when it comes to development of new memory chips, it should be noted that the company will not initiate mass production of the BiCS 3D flash earlier than in 2016. |
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发表于 2015-8-4 20:54:30
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